雙電四探針(zhen)電阻率詳情介紹

適用范圍

1.覆(fu)(fu)蓋(gai)膜(mo)(mo)(mo);導(dao)電(dian)(dian)(dian)高分子膜(mo)(mo)(mo)，高、低溫電(dian)(dian)(dian)熱(re)膜(mo)(mo)(mo);隔熱(re)、導(dao)電(dian)(dian)(dian)窗膜(mo)(mo)(mo) 導(dao)電(dian)(dian)(dian)(屏(ping)蔽)布、裝飾膜(mo)(mo)(mo)、裝飾紙;金屬化標簽、合(he)金類(lei)箔膜(mo)(mo)(mo);熔(rong)煉(lian)、燒結(jie)、濺射、涂(tu)覆(fu)(fu)、涂(tu)布層(ceng)，電(dian)(dian)(dian)阻式、電(dian)(dian)(dian)容(rong)式觸(chu)屏(ping)薄(bo)(bo)膜(mo)(mo)(mo);電(dian)(dian)(dian)極涂(tu)料，其他半導(dao)體(ti)材料、薄(bo)(bo)膜(mo)(mo)(mo)材料方阻測(ce)試

2.硅晶塊(kuai)、晶片電(dian)(dian)(dian)(dian)阻率及擴散層、外延層、ITO導(dao)(dao)電(dian)(dian)(dian)(dian)箔(bo)膜(mo)(mo)(mo)、導(dao)(dao)電(dian)(dian)(dian)(dian)橡膠(jiao)等(deng)材料方塊(kuai)電(dian)(dian)(dian)(dian)阻  半導(dao)(dao)體材料/晶圓、太陽(yang)能電(dian)(dian)(dian)(dian)池(chi)、電(dian)(dian)(dian)(dian)子(zi)元(yuan)器件，導(dao)(dao)電(dian)(dian)(dian)(dian)薄膜(mo)(mo)(mo)（ITO導(dao)(dao)電(dian)(dian)(dian)(dian)膜(mo)(mo)(mo)玻璃等(deng)），金屬膜(mo)(mo)(mo)，導(dao)(dao)電(dian)(dian)(dian)(dian)漆膜(mo)(mo)(mo)，蒸(zheng)發鋁膜(mo)(mo)(mo)，PCB銅(tong)箔(bo)膜(mo)(mo)(mo)，

3.EMI涂層等物質的薄(bo)層電(dian)(dian)(dian)(dian)阻與電(dian)(dian)(dian)(dian)阻率  導(dao)(dao)電(dian)(dian)(dian)(dian)性(xing)油漆，導(dao)(dao)電(dian)(dian)(dian)(dian)性(xing)糊狀物，導(dao)(dao)電(dian)(dian)(dian)(dian)性(xing)塑(su)料，導(dao)(dao)電(dian)(dian)(dian)(dian)性(xing)橡膠，導(dao)(dao)電(dian)(dian)(dian)(dian)性(xing)薄(bo)膜，金屬薄(bo)膜，

4.抗靜電(dian)材料(liao)(liao)， EMI 防護材料(liao)(liao)，導電(dian)性纖維(wei)，導電(dian)性陶瓷等，

雙(shuang)電(dian)四探針電(dian)阻率詳情介紹

功能描述Description：

1. 四探針組合雙電測量方(fang)法

2. 液(ye)晶顯示(shi)，自動(dong)測量(liang)，自動(dong)量(liang)程，自動(dong)系(xi)數補償.

3. 集成電(dian)路系統、恒流(liu)輸出.

4. 選配(pei)：PC軟件進行數據管理(li)和處(chu)理(li).

5. 提(ti)供中文(wen)或(huo)英文(wen)兩種(zhong)語言操作界面選擇

參照標準：

1.硅片電阻率測量的標(biao)準（ASTM F84）.

2.GB/T 1551-2009 《硅單晶(jing)電阻率(lv)測定方法》.

3.GB/T 1551-1995《硅、鍺單晶電阻率測(ce)定直(zhi)流兩探針法》.

4.GB/T 1552-1995《硅、鍺單晶電阻率測定直流四探(tan)針法》.

雙電組合測試方法：

利用電(dian)流探(tan)(tan)針(zhen)、電(dian)壓(ya)探(tan)(tan)針(zhen)的(de)變換，進行兩次電(dian)測量(liang)，對數據進行雙電(dian)測分析，解決樣(yang)品幾何尺寸(cun)、邊界效應以(yi)及探(tan)(tan)針(zhen)不等距和機械游移等因素(su)對測量(liang)結果的(de)影響，適用于(yu)(yu)斜置式四(si)探(tan)(tan)針(zhen)對于(yu)(yu)微區的(de)測試。

工作原理和計算公式

1.雙電測四探針法測試薄層樣品方阻計算和測試原理如下：

直(zhi)線四探針(zhen)測試布局如圖8，相鄰針(zhen)距分別為S1、S2、S3,根據(ju)物理基(ji)礎和電學原(yuan)理：

當電流通過1、4探針，2、3探針測試電壓時計(ji)算(suan)如下：